Study of Power supply, (Solid State) Model – SPS – 12.

Study of Multivibrators (using Transistors),Model – MV– 12.

Study of Hybrid– Parameters of a Transistor, Model – H – 01.

Measurement H, Y & Z parameter of junction transistor in CE mode at different emitter Current value, Model – H – 02

Study of Basic Operational Amplifier, Model – LM – 741.

Study of Op – Amp. Math–Circuits, Model – 741 M.(using Op-Amp. as Summer, Substractor, Integrator, Differential)

Study of Comparator and Schmitt Trigger Using Op – Amp., Model – CST – 10

Study of Precision Rectifier Using Op-Amp., Model – PR – 10.

Study Of Voltage Controlled Oscillator Using I.C. – Ne - 566, Model – VCO – 10

Study of an Integrated circuit timer, Model – 555.

Study of astable and monostable multivibrator using I.C. – 555, Model – AM – 555.

Study of an integrated circuit regulator, Model – 723.

Study of a transistor amplifier (RC Coupled) Cum-Feed-Back Amplifier, Model – RC – 10

Performance study of two stage amplifier with RC, LC and Transformer coupling, Model – CT–12.

Study of Single Stage Transistor Amplifier in CE Mode, Model – CE - 10.

Study of single stage Transistor Amplifier in Common Base Mode, Model – CB– 12.

Study of load variation and frequency response of single stage CE amplifier, Model – LF – 04.

Performance Study Of Chopper Amplifier, Model – CA – 10.

Study of Instrumentation Amplifier using Op – Amp., Model – IA – 12

Transistorized Emitter Follower / Darlington Pair Amplifier, Model – FD – 10.

Performance study of a class A, AB and B Push – pull, Model - PP – 10

Different types of characteristics of junction (NPN transistor) transistor in CE, CB and CE configuration, Model – JT – 10.

Different types of characteristics of junction (PNP transistor) transistor in CE, CB and CE configuration, Model – JT – 11.

Different types of characteristics of junction (NPN & PNP) transistor in CE, CB and CE configuration, Model – JT – 12.

Study of Characteristics of Semiconductor Diode : Si, Ge, Zener and LED, Model – SD – 12.

Study of Semiconductor Diode Voltmeter, (Study of semiconductor diode voltmeter use as average responding ac voltmeter) Model – SDV – 10.

Characteristics of P.N. Junction Diode (Ge & Si) and Comparison, Model – D – 01.

Characteristics of Zener Diode and Zener Regulator, Model - Z – 10.

Study of Logarithmic Amplifier Using Op – Amp., Model – LA – 10

Characteristics of Unijunction Transistor (UJT) and Measurement of Its Parameters, Model – UJ – 05.

Characteristics of Field Effect Transistor (FET) measurement of its Parameters, Model – FT – 10

Study of voltage to Frequency Conversion, Model – VF – 12.

Study of voltage to Current Conversion, Model – VC – 12.

Study of Characteristics of Semiconductor Diode : Si, Ge, Zener and LED, Model – SD – 12.

THE  EXPERIMENTAL  SET-UP  CONSISTS  OF  THE  FOLLOWING  :

1. Diodes  :  Rectifier – 4001 (Si),  Signal – IN 34  (Ge)  and  Zener  6.1, Volt  and  Light  emitting  Diode.
2. 3 ½  Digit  Digital  Voltmeter  which  can  measure  voltage  ( 0 – 20, Volt).
3. Suitable  precision  resistance  are  provided  for  the  measurement  of  forward  current,  reverse  current,  in  the  range  of  10, mAmp.  to  200, mAmp.
4. I.C.  Regulated  variable  Power  Supply.  ( 0 – 12, Volt).

The   experimental   set – up   has   been    laid – down  on  a  decorated  bakelite  board  with  an aim  of   providing   an  easy  understanding  to  the  students.  All  components  are  well  spread out  for  clarity  with  suitable  sockets  and  patch  chords  for  easy  and  proper  connections.

 

The  experimental  set – ups  is  complete  in  all  respects.

THE  FOLLOWING  STUDIES  MAY  BE  CARRIED  WITH  THIS  SET – UP  :

1.                  Forward  and  Reverse  Characteristics  of  both  Ge, Si  Diode  and  LED’s.

2.                  Study  of  Zener  Diode  Characteristics.

**        Weight : 2 Kg. Approximately

**        Dimension : 280mm × 210mm × 82mm

The  set – up  is  provided  with  a  booklet  which  contains  its  theory  of  operations,  description,   suggestions   and   discussion  of   the   experiments   that  may  be   performed  with  it.

 

 

 

      Note: There may be any change in specification due to continuous R & D without notice.

 

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